PART |
Description |
Maker |
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns 1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
|
Alliance Semiconductor
|
MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块)
|
Fujitsu Limited Fujitsu, Ltd.
|
AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
S29CD016G0PQAI002 S29CD016G0MFAN001 S29CD016G0MFAN |
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位12亩32位)的CMOS 2.5伏特,只有突发模式,双启动,同步写闪 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar LG[LG Semicon Co.,Ltd.]
|
MBM29BS32LF18 MBM29BS32LF18PBT MBM29BS32LF25PBT MB |
BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT
|
SPANSION
|
AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20 1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp. ALLIANCE SEMICONDUCTOR CORP
|
HY514400A HY514400AJ HY514400ALJ HY514400ALR HY514 |
1M x 4-bit CMOS DRAM
|
ETC
|